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Tomás Palacios

Massachusetts Institute of Technology

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About Tomás Palacios at Massachusetts Institute of Technology (MIT)

Tomás Palacios holds an academic position at Massachusetts Institute of Technology. Their scholarly work centers on GaN-based semiconductor devices and materials, Semiconductor materials and devices, and Silicon Carbide Semiconductor Technologies. With over 35,635 citations to their name, their contributions have had a measurable and lasting impact on the field. An H-index of 87 underscores the consistent quality and influence of their published research.

Research Areas

GaN-based semiconductor devices and materialsSemiconductor materials and devicesSilicon Carbide Semiconductor TechnologiesGa2O3 and related materialsGraphene research and applications

Academic Impact Matrix

Research output metrics for Tomás Palacios aggregated from public academic databases. Student lab experience data is pending.

Academic data verified · April 2026 · Next sync: May 2026

Research Output

Total Citations35,635

Top 5% globally

Publications494

Highly prolific researcher

h-index87

Nobel-level impact

i10-index288

Exceptional breadth

Lab Environment

No lab data yet for Tomás Palacios

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